Kingston
Kingston KVR32S22S8/8 1 x 8 GB DDR4 3200 MHz Notebook Memory KVR32S22S8/8
- UPC:
- 740617296099
- MPN:
- KVR32S22S8/8
- Condition:
- New
- Availability:
- Available with FREE Delivery (usually delivered within 5-7 working days)
Description
ValueRAM, Kingston's industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.
Features
Power Supply: VDD = 1.2V Typical
VDDQ = 1.2V Typical
VPP = 2.5V Typical
VDDSPD = 2.2V to 3.6V
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
PCB: Height 1.18" (30.00mm)
RoHS Compliant and Halogen-Free
Weight & dimensions
Height
30 mm
Width
69.6 mm
Logistics data
Harmonized System (HS) code
84733020
Sustainability
Doesn't contain
Halogen
Sustainability certificates
RoHS
Features
Internal memory type
DDR4
Memory clock speed
3200 MHz
ECC
No
Memory layout (modules x size)
1 x 8 GB
Row cycle time
45.75 ns
Memory voltage
1.2 V
Refresh row cycle time
350 ns
Row active time
32 ns
Lead plating
Gold
Country of origin
Taiwan
Internal memory
8 GB
Memory form factor
260-pin SO-DIMM
Component for
Laptop
CAS latency
22
Buffered memory type
Unregistered (unbuffered)
Operational conditions
Operating temperature (T-T)
0 - 85 �C
Storage temperature (T-T)
-55 - 100 �C
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Features
Power Supply: VDD = 1.2V Typical
VDDQ = 1.2V Typical
VPP = 2.5V Typical
VDDSPD = 2.2V to 3.6V
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
PCB: Height 1.18" (30.00mm)
RoHS Compliant and Halogen-Free
Weight & dimensions
Height
30 mm
Width
69.6 mm
Logistics data
Harmonized System (HS) code
84733020
Sustainability
Doesn't contain
Halogen
Sustainability certificates
RoHS
Features
Internal memory type
DDR4
Memory clock speed
3200 MHz
ECC
No
Memory layout (modules x size)
1 x 8 GB
Row cycle time
45.75 ns
Memory voltage
1.2 V
Refresh row cycle time
350 ns
Row active time
32 ns
Lead plating
Gold
Country of origin
Taiwan
Internal memory
8 GB
Memory form factor
260-pin SO-DIMM
Component for
Laptop
CAS latency
22
Buffered memory type
Unregistered (unbuffered)
Operational conditions
Operating temperature (T-T)
0 - 85 �C
Storage temperature (T-T)
-55 - 100 �C
Additional Information
Shipping: |
Usually shipped within 3-5 working days |
Delivery: |
Usually delivered within 5-7 working days |